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  • 6:51 AM, Wednesday, 22 Jan 2020


Course Postgraduate
Semester Sem. I
Subject Code AVM611
Subject Title Physics of Micro and Nanoelectronic Devices

Syllabus

Review of quantum mechanics, E-k diagrams, effective mass, electrons and holes in
semiconductors, band diagram of silicon, carrier concentration, carrier statistics,
career transport, junction devices(P-N junction, Metal –semiconductor junctions,
solar cells etc), MOS capacitor as a building block for MOSFETs (Ideal MOS,
real/Non ideal MOS, band diagrams, C-V characteristics, electrostatics of a
MOSCAP), MOSFET, I-V characteristics, scaling, short channel and narrow
channel effects, high field effects. Reliability of transistor

Text Books

Same as Reference

References

1. Donald A Neamen, Semiconductor Physics and Devices: Basic Principles, McGraw-Hill (1997) ISBN 0-256-24214-3
2. Yuan Taur & Tak H Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998
3. Robert F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley (1995), ISBN 020154393-1
4. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley, 1982.
5. K. K. Ng, Complete Guide to Semiconductor Devices, McGraw Hill, 1995.