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  • 7:00 AM, Wednesday, 22 Jan 2020


Course Postgraduate
Semester Electives
Subject Code AVM868
Subject Title Power semiconductor devices

Syllabus

Introduction to Power Semiconductor devices, Device Basic Structure and
Characteristics , High current effects in diodes, Breakdown considerations for various
devices, Schottky rectifiers.- P-i-N rectifiers Power BJTs, Parasitics in Power
Transistors, Power MOSFETs, Thyristors , Power Insulated Gate Transistors, Heat
transfer in power devices, device packaging

Text Books
References

1. Baliga,G.J., Fundamentals of Power Semiconductor Devices ,Springer.
2. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, 1981