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  • 12:10 AM, Friday, 15 Nov 2019


Course Undergraduate
Semester Sem. III
Subject Code AV212
Subject Title Semi Conducter Devices

Syllabus

Semiconductor fundamentals, crystal structure, concept of effective-mass, Fermi level, energy‐band diagram, concept of holes, intrinsic and extrinsic semiconductors, carrier concentration, carrier transport, scattering and drift of electrons and holes, drift and diffusion, generation and recombination, quasi-Fermi levels.

Semiconductor junctions, Physical description of p‐n junction, p-n junction under forward and reverse bias, current – voltage characteristics and temperature dependence, tunneling current and tunnel diode, small signal ac analysis.

Hetero junctions and Schottky junctions, Bipolar Junction Transistors, base width modulation, frequency limitations, pnpn diode, SCR, MOS capacitor, flat‐band and threshold voltages, MOSFETs, scaling laws of MOS transistors.

Optical absorption in a semiconductor, photovoltaic effect, solar cell, photoconductors, PIN photodiode, avalanche photodiode, LED, semiconductor LASER, negative conductance in semiconductors, transit time devices, IMPATT, Gunn device, IGBT.

Text Books

1. S. M. SZE, Semiconductor Physics and Devices, Wiley Student Edition, 2007.

2. Ben G. Streetman and Sanjay Kumar Banerjee, Solid State Electronic Devices, Dorling Kindersley, 2007.

3. Robert.F. Pierret, Semiconductor Device Fundamentals, Prentice Hall of India, 2007. 4. Donald Neamen, Semiconductor Physics and Devices, McGraw publishers

References