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  • 10:54 AM, Sunday, 24 Oct 2021


Course Postgraduate
Semester Electives
Subject Code AVM867
Subject Title Power Semiconductor Devices

Syllabus

Introduction to Power Semiconductor devices, Device Basic Structure and Characteristics , High current effects in diodes, Breakdown considerations for various devices, Junction Termination techniques for increasing breakdown voltage, edge termination in devices, beveling, open base transistor breakdown Structure & Performance of Schottky and PIN Power Diodes , Parasitic Circuit Elements in Power Diode Rectifiers, Circuit Requirements for Power Transistor Switches, Structure& Performance of Power Transistors: a. MOSFETs; b. BJTs and IGBTs, Parasitic Circuit Elements in Power Transistor Switches , Circuit Requirements for PNPN Thyristors, Structure & Performance of PNPN Thyristors, Parasitic Circuit Elements in PNPN Thyristors, Implementation of Power Electronic Devices using SiC & GaN, Heat transfer in power devices, packaging of power devices

Text Books
References

1.Baliga,G.J., Fundamentals of Power Semiconductor Devices, Springer.

2.S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, 198