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  • 10:11 PM, Sunday, 20 Sep 2020


Course Postgraduate
Semester Electives
Subject Code AVM867
Subject Title Power Semiconductor Devices

Syllabus

Introduction to Power Semiconductor devices, Device Basic Structure and Characteristics , High current effects in diodes, Breakdown considerations for various devices, Junction Termination techniques for increasing breakdown voltage, edge termination in devices, beveling, open base transistor breakdown Structure & Performance of Schottky and PIN Power Diodes , Parasitic Circuit Elements in Power Diode Recitifiers, Circuit Requirements for Power Transistor Switches,Structure & Performance of Power Transistors: a. MOSFETs; b. BJTs and IGBTs, Parasitic Circuit Elements in Power Transistor Switches , Circuit Requirements for PNPN Thyristors, Structure & Performance of PNPN Thyristors, Parasitic Circuit Elements in PNPN Thyristors, Implementation of Power Electronic Devices using SiC & GaN, Heat transfer in power devices, packaging of power devices

Text Books
References

1. Baliga,G.J., Fundamentals of Power Semiconductor Devices ,Springer.
2. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, 1981.