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  • 10:11 PM, Sunday, 20 Sep 2020

Course Postgraduate
Semester Electives
Subject Code AVM867
Subject Title Power Semiconductor Devices


Introduction to Power Semiconductor devices, Device Basic Structure and Characteristics , High current effects in diodes, Breakdown considerations for various devices, Junction Termination techniques for increasing breakdown voltage, edge termination in devices, beveling, open base transistor breakdown Structure & Performance of Schottky and PIN Power Diodes , Parasitic Circuit Elements in Power Diode Recitifiers, Circuit Requirements for Power Transistor Switches,Structure & Performance of Power Transistors: a. MOSFETs; b. BJTs and IGBTs, Parasitic Circuit Elements in Power Transistor Switches , Circuit Requirements for PNPN Thyristors, Structure & Performance of PNPN Thyristors, Parasitic Circuit Elements in PNPN Thyristors, Implementation of Power Electronic Devices using SiC & GaN, Heat transfer in power devices, packaging of power devices

Text Books

1. Baliga,G.J., Fundamentals of Power Semiconductor Devices ,Springer.
2. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, 1981.