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  • 10:54 AM, Friday, 24 Jan 2020


Course Postgraduate
Semester Sem. I
Subject Code AVR613
Subject Title Microwave Semiconductor Devices

Syllabus

Transient and ac behavior of p-n junctions, effect of doping profile on the capacitance of p-n junctions, noise in p-n junctions, high-frequency equivalent circuit, varactor diode and its applications; Schottky effect, Schottky barrier diode and its applications; Heterojunctions.

Tunneling process in p-n junction and MIS tunnel diodes, V-I characteristics and device performance, backward diode.

Impact ionization, IMPATT and other related diodes, small-signal analysis of IMPATT diodes.
Two-valley model of compound semiconductors, vd-E characteristics, Gunn effect, modes of operation, small-signal analysis of Gunn diode, powerfrequency limit.

Construction and operation of microwave PIN diodes, equivalent circuit, PIN diode switches, limiters and modulators.

High frequency limitations of BJT, microwave bipolar transistors, heterojunction bipolar transistors; Operating characteristics of MISFETs and MESFETs, short-channel effects, high electron mobility transistor.

Text Books
  1. Liao, S.Y., “Microwave Devices and Circuits”, 4th Ed., Pearson Education (2002).
  2. Rebeiz, M.G., “R.F. MEMS: Theory, Design and Technology”, 2nd Ed.,Wiley-Interscience (2003).
  3. Sze, S.M., and Ng, K.K., “Physics of Semiconductor Devices”, 3rd Ed.,Wiley-Interscience (2006).
  4. Glover, I.A., Pennoek, S.R. and Shepherd P.R., “Microwave Devices, Circuits and Sub-Systems”, 4th Ed., John Wiley & Sons (2005).
  5. Golio, M., “RF and Microwave Semiconductor Devices Handbook”, CRC Press (2002).
References

Same as Textbooks