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Kuntala Bhattacharjee-Profile : IIST
  • 7:25 AM, Thursday, 23 Nov 2017

Department of Physics
Kuntala Bhattacharjee, Ph.D
Assistant Professor
Tel:+0471-2568 637

  • Ph.D. (Physics), Institute of Physics, Bhubaneswar.
  • M.Sc. (Physics), Hyderabad Central University, Hyderabad.

  • Visiting Scientist/Postdoctoral Fellow, Institute of Physics, Bhubaneswar, 2011-2012.
  • Postdoctoral Fellow, Max Planck Institute of Microstructure Physics, Halle, Germany, 2008-2011.

Research Work / Area
  • Semiconductor, metal nanostructures. Self-assembly by molecular beam epitaxy (MBE). Various scanning probe techniques. Study of low dimensional structures by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS).
Selected Publications:
  1. Patterns in Ge cluster growth on clean and oxidized Si(111)-(7 x 7) surfaces. A. Roy, T. Bagarti, K. Bhattacharjee, K. Kundu and B. N. Dev.Surf. Sci. 606, 777-783 (2012).
  2. Electronic structure of the corrugated Cu3N network on Cu(110): tunneling spectroscopy investigations. K. Bhattacharjee, X. -D. Ma, Y. Q. Zhang, M. Przybylski and J. Kirschner.Surf. Sci. 606, 652-658 (2012).
  3. Growth of oriented Ag nanocrystals on air-oxidized Si surfaces: An in-situ reflection high energy electron diffraction study. A. Roy, K. Bhattacharjee, J. K. Dash and B. N. Dev.Thin Solid Films 520, 853-860 (2011).
  4. Ultrasmall Ge islands with low diameter-to-height aspect ratio on Si(100)-(2 x 1) surfaces. K. Bhattacharjee, A. Roy, J. Ghatak, P. V. Satyam and B. N. Dev.Appl. Surf. Sci. 256, 356-360 (2009).
  5. Ge growth on Self-affine fractal Si surfaces: Influence of surface roughness. A. Roy, K. Bhattacharjee, H. P. Lenka, D. P. Mahapatra and B. N. Dev.J. Phys. D: Appl. Phys. 42, 145303(1)-145303(8) (2009).
  6. Electronic structure of Ag-adsorbed nanowire-like stripes on Si(110)-(16 x 2) surfaces: An STM and STS experiments. K. Bhattacharjee, A. Roy, K. Kundu and B. N. Dev.Phys. Rev. B 77, 115430(1)-115430(7) (2008).
  7. Electronic structure of Ag-adsorbed nanowire-like stripes on Si(110)-(16 x 2) surfaces : A 1-D tight binding model with Green’s function approach. K. Bhattacharjee, A. Roy, K. Kundu and B.N. Dev.Phys. Rev. B 77, 115431(1)-115431(15) (2008).
  8. Probing Atomic Migration in Nanostructured Multilayers: Application of X-Ray Standing Wave Fields. S. Bera, K. Bhattacharjee, G. Kuri and B. N. Dev.Phys. Rev. Lett., 98, 196103(1)-196103(4) (2007).
  9. Atomic scale height preference in Ag islands on Si(111)-(7 x 7) surfaces. D. K. Goswami, K. Bhattacharjee, B. Satpati, S. Roy, P. V. Satyam and B. N. Dev.Surf. Sci. 601, 603-608 (2007).
  10. Ion beam induced transformations in nanoscale multilayers: Evolution of clusters with preferred length scales. S. Bera, B. Satpati, D. K. Goswami, K. Bhattacharjee, P. V. Satyam and B. N. Dev.Jr. of Appl. Phys. 99, 074301(1)-074301(5) (2006). Publisher: American Institute of Physics (AIP).
  11. Nanoscale self-affine surface smoothing by ion bombardment and the morphology of nanostructures grown on ion bombarded surfaces. K. Bhattacharjee, S. Bera, D. K. Goswami and B. N. Dev.Nucl. Instr. and Meth. B 230, 524-532 (2005).
  12. Ge growth on ion-irradiated Si self-affine fractal surfaces.D. K. Goswami, K. Bhattacharjee and B. N. Dev.Surf. Sci. 564, 149-155 (2004).