Education

• Ph.D (Physics): Leiden University, The Netherlands
• Ph.D (Electrical Engineering): Twente University of Technology, The Netherlands
• M.Sc. (Physics): Cochin University of Science and Technology (CUSAT), Cochin, India.
• B.Sc (Physics): Mahatma Gandhi University, Kottayam, Kerala, India.

H-index (as on 2021 September): 23

Total citation (as on 2021 September): 1909

Course Offered

1. MEMS and MOEMS (MS Dual Degree, MTech OE, 2019)
2. Nanoelectronics: (MS Dual Degree, 2018)
3. Semiconductor Physics (MS Dual Degree 2017, 18, 19)
4. Solid State Physics-I (M.Tech SST , B. Tech PE: 2015, 16)
5. Solid State Devices (B.Tech Avionics 2014)
6. Solid State Devices and Nanoelectronics (M.Tech SST 2014, 15, 16,17)
7. Thin films: Physics and Technology (M.Tech. SST, Opt. Eng. 2014, 15, 16)
8. Plasmonics (M.Tech SST 2014, 15)
9. Semiconductor theory (M.Tech SST 2014, 15, 16, 19)
10. Electromagnetic waves and applications (MTech SST 2013)
11. Physics of Micro and Nano Devices (MTech VLSI 2013)
12. Solid-state Technology Lab (2014-2016).

Faculty Development Programme Lectures:

1. Scanning Tunneling Microscopy and Spectroscopy, Bharathiar University (January 2020)
2. Scanning Probe Microscopy, University of Kerala (November 2019)
3. Intellectual Property Rights and Patents, University of Kerala, Karyavattom Campus (2017 March)
   
4. Nanomaterials: application perspectives, University of Kerala, Karyavattom Campus (2016 Nov.)
   
5. Graphene: Department of Physics, University of Kerala, Karyavattom campus (2015 Dec.)
   
6. Introduction to Nanoelectronics: Amal Jyothi College of Engineering (2015 April).
7. The revolutions in the Electronic Memory: TKM College, Kollam (2015 March).
8. Technology Roadmaps: University of Kerala, Karyavattom campus (2014 Nov.).
9. Nanotechnology Roadmaps:  Department of Physics, University of Kerala, Karyavattom campus (2014 Nov.).

Experience

• 2017 July onwards: Associate Professor, Indian Institute of Space-Science and Technology (IIST).
• 2013 July-2017July: Assistant Professor, Indian Institute of Space-Science and Technology (IIST).
• 2010 – 2012: Senior Researcher: Nanyang Technological University, Singapore.
• 2009-2010: Scientist: IMEC (Holst Center), Eindhoven, The Netherlands.
• 2006-2009: Scientist: Philips Research (NXP Semiconductors), Eindhoven, The Netherlands.
• 2002-2006: Doctoral Fellow: Leiden University, The Netherlands.
• 2001-2002: Junior Scientist: Delft University of Technology, The Netherlands.

Research Work / Area

• Future Memory Technology: Neuromorphic memory, Artificial Synapse for future Artificial Intelligence and Data Management; in particular Resistive Random Access Memory (ReRAM), Spintronic and hybrid devices for memory technology.
• Nanoelectronic Materials: graphene and other 2D materials for electronic applications, charge transport mechanisms through nanostructures and their electronic applications.
• Atomic layer deposition (ALD): High-k materials for advanced CMOS technology and thin-film electronics, ultra-thin functional coatings for nano-devices
• Flexible electronics: Materials for flexible electronics; MOS and MOSFET devices using novel semiconducting/high-k materials;
• Thin-film solar cells: Vacuum-based absorber layers (CIGS, CZTS, etc.) – grain boundary effects of p-type polycrystalline absorber layers, DFT calculations to predict the properties of novel p-type materials; Cd-free window layers for solar cells; band alignment of pn junctions.

Ph.D. Programs:

1. Resistive RAM and Neuromorphic Systems: Role of Ions and Interface States: Ph.D. work of Dr. Preetam Hazra (Ph.D. awarded: 2020 October. (Currently at IIT Mumbai)
2. Two-Dimensional materials and their derivatives for Neuromorphic Memory Applications: Ms. Anna Thomas (Synopsis submitted 2021)
3. Pulsed Laser Deposited BFO Thin Films for Neuromorphic Memory Applications: Mr. Dayal. G (2017-)
4. Pavlovian Conditioning in Neuromorphic Systems: Mr. Viswajit. R.S. (2021-)
5. Atomic Layer Deposition and Applications: Mr. Jyothish Raj (2021-)
6. Carbon materials for Space Applications: Ms. Debashree Das (2021-)

Master's Projects Completed

2019

1. Crossbar ReRAM Memory and sneaking currents; Harsh Kadian (IIT Ropar)
2. Lithium doped ZnO by spray pyrolysis; Anaswara Ramdas (Govt. College, Madappally)
3. Metal quantum dots by pulsed laser ablation; Greeshma. G (Mercy College, Palakkad)
4. Simulations of multi-layer memory devices; Anu. K.M. (Mercy College, Palakkad)
5. STM studies of MoS2 on graphite; Ajay B.U. (M.G. College, Trivandrum)
6. Synthesis of MoS2 quantum dots and their characterization; Megha. P.K. (M.G. College, Trivandrum)
7. Optoelectronic properties of MoS2 quantum dots; Shahna Hakkim (M.G. College, Trivandrum)
8. Pulsed laser deposition of Fe:ZnO; Vishnu G Nath (Govt. College, Calicut)
9. Optical memory using CuPC thin films; Kiran Jose (Christ College, Bangalore)
10. Synthesis of Nanodiamonds and their coatings; Aruja Jose (Marthoma College, Thiruvalla)
11. Operational statistics of Crossbar memory arrays; Sachin Jose and Joice Thomas (K.E. College, Mannanam)
12. Manganese doped ZnO for optoelectronics; Kanzul Karim (Vellore Institute of Technology, Chennai)
13. Pulsed laser deposition of ZnO and doped ZnO; Anitta Jose, Anjana Roy (CUSAT, Cochin)

 2018

1. Optoelectronic properties of CuPc/Alq3 p-n junctions and applications in Photosensing and Light Emitting Diodes; Ms. Afiya. M. Raj, Kerala University (M.Tech Project).
2.  Liquid Phase Pulsed Laser Ablation of graphene and its optoelectronic applications;  Ms. Parvathy S, Kerala University (M.Tech Project).
3. Resistive RAM devices using nanoparticle embedded PMMA thin films; Ms. Ayswarya Suresh, Mar Thoma College, Ayur (M.Sc Project).
4. Resistive Random Access Memory (ReRAM) devices: Ms. Asmita Jash (M.Tech. Project, IIST).
5. Mixed Halide Perovskite Solar Cells: Towards Iodine Free High-Efficiency Solar Cells: Ms. Jayita Dutta (M.Tech. SST Project).
6. Bandgap statistics of single-layer MoS2 using Scanning Tunneling Microscope; Akhil Mohanan, Kannoor University (M.Sc. Projects).
7. Spectroscopy of MoS2 Quantum Dots: Nayana. S, St Xaviers College, Thumpa (M.Sc. Project).
8. Resistive memory behavior in ZnO p-n junctions: Meenu. P. NSS College, Ottapalam (M.Sc. Project).
9. Resistive memory using Graphene-intercalated PMMA layers; Beena. K. NSS College, Ottapalam (M.Sc. Project).
10. Nano-lithography using Scanning Tunneling Microscope; Hyiday Dath (MS Dual Degree Mini Project).
11. Modeling of MoS2 Thin-Film Transistors; Nandakishor. M. (MS Dual Degree Mini project).

2017

1. Optical sensors using reduced graphene oxide (cont.): Ms. Greeshma P.S. (M.Tech project, University of Kerala)
2. Photoconductivity of MoS2 Thin Films and Quantum Dots: Ms. Lekshmi P.R. (M.Tech project, University of Kerala)
3. Metal electrodes for ReRAM Technology, Mr. Jeevan Philip (M.Tech project, IIST).
4. Resistive switching in MoS2 quantum dots; Akash Ganguly (B.Tech. Engineering Physics, IIST) (Currently at ISRO)
5. MoS2 Thin film transistors, Jay Bhutt (B.Tech. Engineering Physics, IIST) (Currently at ISRO)
6. ReRAM devices using Carbon dots, Sandeep Kumar (B.Tech Avionics, IIST) (Currently at ISRO)
7. Flexible organic memory devices: Rajat Kumar (B.Tech Avionics, IIST) (Currently at ISRO)
8. Modeling of IR Bolometers for thermal imaging: Mr. Dinesh Jangid (B.Tech. Avionics, IIST) (Currently at ISRO)

 2016

1. Effect of molecular weight on the resistive switching of PMMA; Ms. Jeena Varghese, M.Sc project (Univ. College, Trivandrum) (Currently doing PhD at Adam Mickiewicz University Poznan, Poland)
2. Optical detectors using reduced Graphene oxide: M.Tech project Mr. Rajkrishnan (Kerala University),
3. Thin film transistors using graphene derivatives; Somnath Chakraborty, M.Tech project.(currently doing PhD at IIT Mumbai).
4. CdTe-based Thin film Solar cells: Maheswari S, M.Tech Project (currently doing PhD at NUS, Singapore).
5. ZnO-based thin film transistors using spray pyrolysis: Joel Zacharias, M.Tech Project. (Currently PhD student, IIST)
6. Switching mechanisms of graphene oxide: Silpasree S.J., Amrita Vishwa Vidyapeetham, Kollam, M.Sc project (currently doing PhD at Amrita Institute of Nanosciences).
7. Bandgap statistics of graphene oxide reduced by Nd-YAG laser: Harikrishnan. K.S. MAMO College, Mukkam, M.Sc project.
8. Resistive switching in Ag/PMMA/FTO devices as a functionof PMMA Thickness: Aleena Johnson and Keerthana K.K., Devamatha College, Kottayam, M.Sc Project
9. Laser-induced reduction of Graphene oxide: Athira Jose, N.S.S. College, Palakkad, M.Sc project.
10. Preparation and characterization of Mn-doped ZnO: Nandan Babu, NIT Calicut, M.Sc Project. ( Currently doing PhD at Adam Mickiewicz University Poznan, Poland).

2015

1. Resistive Random Access Memory (ReRAM) devices based on Inorganic, organic and hybrid materials; Ms. Shivani Agarwal, M.Tech project (currently doing PhD at IIT Mumbai).
2. Plasmonic transistors with reduced graphene oxide: Ms. Renuka Devi, M.Tech project (currently doing PhD at Italian Institute of Technology).
   
3. Design of a novel transistor architecture for the modern sub-14nm ULSI era: M.Tech project by Mr. Uttam Kumar (currently at IIT Kharagpur).

Completed Internships:

1. Physically Unclonable Functions using PMMA-graphene hybrid devices: S.R. Nidhin, Central University of Tamil Nadu (2016).
2. Laser-induced synthesis of carbon dots from graphene oxide: R. Akshay Raj, IISER Kolkata (2016)
3. CuZnAlS2 for resistive memory applications: P. Alan, IISER Bhopal (2016)
4. Cu-doped ZnO for resistive RAM applications: Ms. P.V. Sruthibhai, IISER Bhopal (2015).
5. Thin-film transistors using spray-coated Cu:ZnO thin films: Mr. K. Somesh, IISER Bhopal (2015).
6. Resistive switching in polymethyl methacrylate (PMMA) thin films: Mr. Jimmy Mangalam, Amity Institute of Nanotechnology, Noida UP (2015).
7. Synthesis and characterization of Mn-doped ZnO nanocones; C.G. Lakshmi, IISER Trivandrum (2014).
8. Synthesis of TiO₂ nanoparticles for electrochemical water splitting: Maneesha Ismail, IISER Kolkata (2014).

Funded Project

Completed Projects:

1. Electronic manipulation of surface plasmon polaritons on graphene: IIST Fast-Track project, (2014-2016): 10 Lakhs

2. Surface Engineering Techniques for Improving the Life Performance of Ball Bearing Systems of ISRO Spacecraft Systems: Funded by ISRO Inertial Systems Unit (IISU, 49.6 Lakhs)

Ongoing Projects

1. Development of an Atomic Layer Deposition System: Project funded by Department of Science and Technology (DST), 2021 (1.22 Crores)
   
2. Development Laser Ignition Systems: Funded by Liquid Propulsion Systems Center (LPSC; 31.14 Lakhs)
3. Development of Surface Discharge Sparkplugs: Funded by Liquid Propulsion Systems Center (LPSC, 23.64 Lakhs).

Teaching Interest

1. Semiconductor Physics

2. Device Physics and Nanoelectronics

3. Solid State Physics

4. Process Technology

Area of Interest

• Future memory technology for data storage, neuromorphic devices for Artificial Intelligence applications, applications of Resistive Random Access Memory (ReRAM or RRAM) for neural networks, cryptography and quantum computation and information processing.
• Thin film transistors and future electronic materials for fast communication, display applications.
• Process technology and integration: nanoelectronic devices and their charge transport mechanisms.
• Atomic Layer Deposition: instrumentation and techniques, new materials and recepies, applications in micro and nanoelectronics.

Awards

• Excellence Starts With You” award of NXP Semiconductors, Netherlands (2009) for the contribution to high-density capacitors project.
• Achieved “Clean Energy Research Program (CERP05)” 2012 grant from Economy Development Board (S$ 3.75M) for developing CIGS solar cell mini-modules in Singapore, together with SERIS, NUS (March 2012).

Patents:

1. US20120151997: Method of making an electrically conductive structure, method of making a gas sensor,  gas sensor obtained with the method and use of the gas sensor for sensing a gas; K.B. Jinesh, M. Crego-Calama, S. Brongersma (2012).
2. US2011263036: Amorphous thin film for sensing; M Blauw, V.A. Dam Thi, K.B. Jinesh (2012).
3. US2011163088: Token comprising improved physical unclonable function; K.B. Jinesh, W.F.A Besling (2011).
4. US2011147891: Capacitor and a method of manufacturing the same; Y. Furukawa, K.B. Jinesh, J.H. Klootwijk, F. Pasveer (2011).
5. US2011148529: Radio frequency amplifier with effective decoupling; W.F.A. Besling, W.T. Bakker, Y. Lamy, F. Roozeboom, K.B. Jinesh (2011).
6. US2011128727: Integrated Seebek device; K.B. Jinesh, J.H. Klootwijk (2011).
7. US2011101471: Method of forming a nanocluster-comprising dielectric layer and device comprising such layer; K.B. Jinesh, W.F.A Besling, J.H. Klootwijk, R.A.M. Wolters, F. Roozeboom. (2011)
8. WO2010103452: Low-frequency filter comprising Maxwell-Wagner stack; K.B. Jinesh, W.F.A. Besling (2010)
9. WO2010038216: Phase-change memory cells and fabrication thereof; K.B. Jinesh, R.A.M. Wolters, M.A. Zandt (2010)
10. WO2010018490: A photovoltaic cell and method of manufacturing the same; Y. Furukawa, F. Pasveer, J.H. Klootwijk, K.B. Jinesh (2010).
11. WO2009153728: Through-wafer via filling method; K.B. Jinesh, Y. Lamy (2009).
12. WO2009150600: Enhanced surface area structure; K.B. Jinesh, F. Roozeboom, J.H. Klootwijk, W. Dekkers (2009).

Publications:

     From IIST

       2021

1. Synthesis of Nanodiamonds using Liquid-Phase Laser Ablation of Graphene and its application in Resistive Random Access Memory; Anna Thomas, M.S. Parvathy, K.B. Jinesh, Carbon Trends, 100023 (2021).
2. Resistive switching in formamidinium lead iodide perovskite nanocrystals: a contradiction to the bulk form; C. Muthu, A.N. Resmi, J.K. Paul, G. Dayal, N. Krishna, K.B. Jinesh*, C.Vijayakumar Nair*, J. Mater. Chem. C (2021)

3. Influence of intensity on copper phthalocyanine based organic phototransistors, L Vijayan, KS Kumar, KB Jinesh, Materials Today: Proceedings (2021).

4. Self-rectifying self-limited Resistive switching in Au/Al₂O₃/FTO Devices, J.A. Lekshmi, T.N. Kumar, A.F. Haider, K.B. Jinesh, 2021 IEEE 21st International Conference on Nanotechnology (NANO), 17-20 (2021)
5. Implementation of sub-filamentary network-based variability model for Ta₂O₅/TaO_x RRAM J.A. Lekshmi, T.N. Kumar, A.F. Haider, K.B. Jinesh, 2021 IEEE 21st International Conference on Nanotechnology (NANO), 366-369
   

   2020
   

6. An inherent Instability study using ab initio computational methods and experimental validation of Pb(SCN)2 based perovskites for solar cell applications; Jayita Dutta, C.A. Mithun, S. Dutta, K.B. Jinesh, B. Rai, Scientific Reports (Springer-Nature Publishing Group, accepted).
7. Programmable electronic synapse and nonvolatile resistive switches using MoS2 quantum dots; Anna Thomas, Resmi A.N., Akash Ganguly, K.B. Jinesh, Scientific Reports 10 (1), 1-10 (2020).
8. Analytical modelling of tantalum/titanium oxide-based multi-layer selector to eliminate sneak path current in RRAM arrays, A.L. Jagath, T.N. Kumar, H.A. Almurib, K.B. Jinesh, IET Circuits, Devices & Systems 14 (7), 1092 (2020)
9. Multilevel non-volatile memory based on Al2O3/ZnO bilayer device; Arya Lekshmi Jagath, Nandha Kumar, K.B. Jinesh, Micro and nano Letters (Accepted).
10. Vertical limits of resistive memory scaling: The detrimental influence of interface states; Preetam Hazra, K.B. Jinesh, Applied Physics Letters, 116 (17), 173502 (2020).
    

      2019

11. Macroscopically oriented (3-pentadecyl phenol) dangled fluorene based conductive polymer through side chain engineering for microelectronics; C Molji, S Renjith, K.B. Jinesh, J.D. Sudha,
    Express Polymer Letters 13 (12) (2019).
12. Organic Field Effect Transistors using Cobalt Phthalocyanine for Ultraviolet sensor applications; Lekhsmi Vijayan, K. Shreekishna Kumar, K.B. Jinesh*, Sensor Letters 17(8) 619 (2019).
    
13. Influence of surfactants on the electronic properties of liquid-phase exfoliated graphene; Sheena Sukumaran,  Saurabh Thripathi, A.N. Resmi, K.G. Gopchandran, K.B. Jinesh*, Material Science and Engineering-B 240, 62 (2019)
14. Stimuli-responsive donor-acceptor poly (dithienyl benzothiodiazole) for efficient charge transport applications; Renjith. S, K.B. Jinesh*, C. Molji, Sudha J.D., Materials Chemistry and Physics, 22, 55 (2019)
    
    

    2018

15. Scaling of resistive random access memory devices beyond 100 nm2: Influence of grain boundaries studied using scanning tunnelling microscopy; Preetam Hazra, K.B. JInesh*, Nanotechnology 29, (49) 495202 (2018).
16. Consideration of UFET Architecture for the 5nm Node and Beyond Logic Transistor, Uttam Kumar Das, Geert Eneman, Ravi Shankar R. Velampati, Y. S. Chauhan, K. B. Jinesh, and T. K. Bhattacharyya, IEEE Journal of the Electron Devices Society, 6, 1129 (2018).
17. Low power organic field effect transistors with Copper Phthalocyanine as the active layer; Lekhsmi Vijayan, Anna Thomas, K. Shreekishna Kumar, K.B. Jinesh*, J. Science - Advanced Materials and Devices 3 (3), 348 (2018).
18. Raman and Scanning Tunneling Spectroscopic Investigation in Graphene-Silver Nanoparticles, Sheena Sukumaran, C.R. Rekha, A.N. Resmi, K.B. Jinesh*, K.G. Gopchandran*, J. Science - Advanced Materials and Devices 3 (3) 353 (2018).
19. Surfactant molecules make liquid phase exfoliated graphene a switching element for resistive random access memory applications; Sheena Sukumaran, K.B. Jinesh*, K.G. Gopchandran*, Journal of Materials Science: Materials in Electronics 29 (11) 9700 (2018) .
    

      2017

20. Liquid-phase exfoliated graphene for electronic applications: Sheena Sukumaran, K.B. Jinesh*, K. Gopchandran*, Material Research Express 4 (9), 095017 (2017).
21. P-channel thin film transistors using reduced graphene oxide: Somnath Chakraborty, A.N. Resmi, Renuka Devi Pothuraju, K.B. Jinesh*, Nanotechnology 28, 155201 (2017)
22. Anisotropic phase formation induced enhancement of resistive switching in bio-based imidazolium ionic liquid crystals; S. Renjith, K.B. Jinesh, S.J. Devaki, Chemistry Select, 2, 315 (2017)

    2014-2016

23. Hybrid Perovskite Nanoparticles for High-Performance Resistive Random Access Memory Devices: Control of Operational Parameters through Chloride Doping;Chinnadurai Muthu, Shivani Agarwal, Anuja Vijayan, Preetam Hazra, K.B. Jinesh,* and Vijayakumar C. Nair*, Advanced Materials Interfaces 3 (18), 1600092 (2016)
24. Gate Controllable ReRAM Devices using Reduced Graphene Oxide; Preetam Hazra, A.N. Resmi, K.B. Jinesh, Applied Physics Letters, 108, 153503 (2016).
25. Facile Strategy for the Fabrication of Efficient Nonvolatile Bistable Memory Device Based on Polyvinylcarbazole-Zinc Oxide; R. Ramakrishnan, S. J. Devaki, K B Jinesh, M. R. Varma, Physica Status Solidi A: Applications and Materials Science 213, 2414 (2016).
26. Resistive switching in Polymethyl Methacrylate thin films; J. Mangalam, S. Agarwal, A.N. Resmi, S. Sundararajan, K.B. Jinesh, Organic Electronics 29, 33 (2016).
27. Defect engineering in ZnO nanocones for visible photoconductivity and nonlinear absorption; M.K. Kavitha, K.B. Jinesh, R. Philip, P. Gopinath, H. John; Phys. Chem. Chem. Phys.16, 25093 (2014).

    Earlier Publications:

28. Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries; V. Aravindan, K.B. Jinesh, R. Ramanujam, S. Madhavi, Nano Energy, 2, 720 (2013).
29. Low-temperature synthesis of wurtzite zinc sulfide thin films by chemical spray pyrolysis; X. Zing, S.S. Pramana, S.G. Mhaisalkar, X. Chen, , K.B. Jinesh, Phys. Chem. Chem. Phys. 15, 6763 (2013).
30. Photo-carrier generation in CuxO thin films deposited using radio frequency magnetron sputtering; T. Viet, M. Rao, P. Andreasson, K.B. Jinesh,  Appl. Phys. Lett. 102, 032101 (2013).
31. Solution-processed CuZnAlS2: a new memory material with electrical bistability; K.B. Jinesh, S.K. Batabyal, R. Devi Chandra, Y. Huang, J. Mater. Chem. 22, 20149 (2012).
32. Effect of Central Metal Ion on Molecular Dipole in Porphyrin Self-Assembled Monolayers; M. A. Khaderbad, M. Rao, K.B. Jinesh, R. Pandharipande, S. madhu, M. Ravikanth, V. R. Rao, Nanoscience and Nanotechnology Letters, 4, 729 (2012).
33. Modulating the optical and electrical properties of all metal oxide solar cells through nanostructuring and ultrathin interfacial layers; N. Yantira, M. H. Kumar, N. Mathews, K.B. Jinesh, S.G. Mhaisalkar, Acta Materialia 85, 486 (2012).
34. Double layer CuInS2 absorber using spray pyrolysis: A better candidate for CuInS2/In2S3 thin film solar cells; A.S. Cherian, K.B. Jinesh, Y. Kashiwaba,  T. Abe, A.K. Balamurugan, S. Dash, A.K. Tyagi, C.S. Kartha, , K.P. Vijayakumar, Solar Energy 86, 1872 (2012).
35. Electrical and photoresponse properties of Co3O4 nanowires; B. Varghese, B. Mukherjee, K. R. G. Karthik, K. B. Jinesh, S. G. Mhaisalkar, Eng Soon Tok, Chorng Haur Sow  J. Appl. Phys. 111, 104306 (2012).
36. Efficient multispectral photodetection using Mn doped ZnO nanowires; R. Ramanujam, N. Mathews, K.B. Jinesh, K.R.G. Karthik, S.S. Pramana, S.H. Saw, S.G. Mhaisalkar J. Mater. Chem., 22, 9678 (2012).
37. Defect levels in SnS thin films prepared using chemical spray pyrolysis, T.H. Sajeesh, K.B. Jinesh, M. Rao, C.S. Kartha, K.P. Vijayakumar, Phys. Stat. Solidi (a) 209 (7), 1274 (2012).
38. Ultra-thin conformal deposition of CuInS 2 on ZnO nanowires by chemical spray pyrolysis, R. R. Prabhakar, S. S. Pramana, K.R.G. Karthik, C. H. Sow, K.B. Jinesh, J. Mater. Chem. 22, 13965 (2012).
39. Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon; M.K. Matters-Kammerer, K.B. Jinesh, F. Roozeboom, J.H. Klootwijk, IEEE Transactions on Semiconductor Manufacturing 25, 247 (2012).
40. Role of pH of precursor solution in taming the material properties of spray pyrolysed SnS thin films; T.H. Sajeesh, K.B. Jinesh, C.S. Kartha, K.P. Vijayakumar Appl. Surf. Sci. 258, 6870 (2012).
41. Enhanced electron field emission properties of high aspect ratio silicon nanowire–zinc oxide core–shell arrays; V.S. Kale, K.B. Jinesh, R. Ramanujam, S.H. Saw, S.G. Mhaisalkar, Phys. Chem. Chem. Phys., 14, 4614 (2012).
42. Charge transport in hierarchical α-Fe2O3 nanostructures; K.R.G. Karthik, H. K. Mulmudi, K.B. Jinesh, N. Mathews, C.H. Sow, Y. Z. Huang, S. G. Mhaisalkar. Appl. Phys. Lett. 99, 132105 (2011).
43. Room-temperature CO 2 sensing using metal–insulator–semiconductor capacitors comprising atomic-layer-deposited La 2 O 3 thin films; K.B. Jinesh, V.A. Dam, S.H. Brongersma, M. Crego-Calama, Sensors and Actuators-B 156, 276 (2011).
44. On single doping and co-doping of spray pyrolysed ZnO films: Structural, Electrical and Optical Characterization; T.V. Vimalkumar, N. Poornima, K.B. Jinesh, C. Sudha Kartha and K.P.Vijayakumar, Appl. Surf. Sci. 257, 8334 (2011).
45. MIM in 3-D: dream or reality? J.H. Klootwijk, K.B. Jinesh, Microelectronic Engineering 88, 1507 (2011).
46. Dielectric properties of thermal and plasma-assisted atomic layer deposited Al2O3 thin Films; K.B. Jinesh, Van Hemmen, J.L., Van De Sanden, M.C.M., Roozeboom, F., Klootwijk, J.H., Besling, W.F.A., Kessels, W.M.M., J. Electrochem. Soc. 158, G21 (2011).
47. Cubic phase stabilization of atomic layer deposited ErHfOx thin films; K.B. Jinesh, Y. Lamy, E. Tois, R. Forti, M. Kaiser, F. Roozeboom, W.F.A. Besling, J. Mater. Res. 8, 1629 (2010)
48. RF characterization and analytical modelling of through silicon vias and coplanar waveguide for 3D integration.Y.P.R. Lamy, K.B. Jinesh, F. Roozeboom, D.J. Gravesteijn and W.F.A. Besling, IEEETransactions on Advanced Packaging 33, 1072 (2010).
49. Plasma-Assisted Atomic layer deposition of TiN/Al2O3 stacks for Metal-Oxide-Semiconductor capacitor applications; D. Hoogeland, K.B. Jinesh, F.C. Voogt, W.F.A. Besling, Y. Lamy, F. Roozeboom, M.C.M. van de Sanden and W.M.M. Kessels. J. Appl. Phys. 106, 114107 (2009).
50. Plasma-Assisted ALD TiN/Al2O3 stacks for MIMIM Trench Capacitor Applications; D. Hoogeland, K.B. Jinesh, F.C. Voogt, W.F.A. Besling, Y. Lamy, F. Roozeboom, M.C.M. van de Sanden and W.M.M. Kessels. Electrochem. Soc. Trans. 25, (2009) 389.
51. Maxwell-Wagner instability in bilayer dielectric stacks; K.B. Jinesh, Y. Lamy, J.H. Klootwijk, W.F.A. Besling, Appl. Phys. Lett. 95, 122903 (2009).
52. Charge conduction mechanisms of atomic-layer deposited Er2O3 thin films; K.B. Jinesh, Y. Lamy, E. Tois, W.F.A. Besling, Appl. Phys. Lett. 94, 252906 (2009).
53. Silicon out-diffusion and aluminum in-diffusion in atomic-layer deposited La2O3 thin films; K.B. Jinesh, Y. Lamy, R. Wolters, W.F.A. Besling, Appl. Phys. Lett. 93, 192912 (2008).
54. Thermolubricity in atomic-scale friction; K.B. Jinesh, S. Yu Krylov, H. Valk, M. Dienwiebel, J.W.M. Frenken; Phys. Rev. B 78, 155440 (2008)
55. Enhanced electrical properties of atomic layer deposited LayZr1-yOx thin films with  embedded ZrO2 nanoclusters: K.B. Jinesh et.al, Appl. Phys. Lett. 93, 172904 (2008).
56. Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films: K.B. Jinesh et.al, Appl. Phys. Lett. 93, 062903 (2008).
57. Ultra-high capacitance density for multiple ALD-grown MIM capacitor stacks in 3D silicon: J.H. Klootwijk, K.B. Jinesh, et. al, IEEE Electron Device Lett. 29 (7) 2008
58. Experimental evidence for ice formation at room temperature; K.B. Jinesh, J.W.M. Frenken, Phys. Rev. Lett. 101, 036101 (2008).
59. Capillary condensation in atomic-scale friction: how water acts like glue; K.B. Jinesh, J.W.M. Frenken, Phys. Rev. Lett. 96, 166103 (2006)
60. Thermally induced reduction of friction at atomic-scale; S. Yu Krylov, K.B. Jinesh, H. Valk, M. Dienwiebel, J.W.M. Frenken; Phys. Rev. E  71, 65101R, (2005).
61. Role of excess Cadmium in the electrical properties of devices made of chemically deposited nano-CdS; K.B. Jinesh, C. Sudha Kartha, K.P. Vijayakumar; Appl. Surf. Sci, 207, 26 (2003).
62. How Quantum confinement comes in chemically deposited CdS? – A detailed XPS investigation; K.B. Jinesh, C. Sudha Kartha, K.P.Vijayakumar; Physica E 19,    303 (2003).
63. Preparation of TiO2 thin films by spray pyrolysis to be used as a photocatalyst; MO Abou-Helal et al, Appl. Surf. Sci. 195 (1-4) 1-314 (2002)
64. Effects of Size-quantization in the I-V characteristics of CdS Bulk- nano junctions; K.B. Jinesh, C. Sudha Kartha, K.P. Vijayakumar, Appl. Surf. Sci, 195, 263 (2002).

Books:

1. Atomic-scale friction: thermal effects and Capillary condensation; K.B. Jinesh, Publisher: Leiden University (ISBN-10: 90-921031-8).
2. Dielectric properties of atomic-layer-deposited LayZr1-yOx and EryHf1-yOx Thin films; K.B. Jinesh, Publisher: Twente University of Technology, (ISBN: 978-90-889-1196-5)

Book Chapters (Invited):

1. Atomic layer deposition for high-density capacitors for Passive integration in Integrated Circuits: K.B. Jinesh & W.F.A. Besling, Nova Publications (in the Series “Capacitors: Theory of Operation, Behavior and Safety Regulations” 2012).
2. Three-dimensional capacitors for passive integration in integrated circuits: K.B. Jinesh & J.H. Klootwijk, Nova Publications (in the Series “Capacitors: Theory of Operation, Behavior and Safety Regulations” 2012).

Invited talks: (International conferences)

1. Future Memory technologies: role of high bandgap semiconductors: International Seminar on Large Band Gap Semiconductors, IISER Trivandrum, India (23 January 2019)
   
2. Atomic layer deposition: from materials to applications: Institute of Smart Structures and Systems 2017 Conference, IISc, Bangalore, India (July 2017)
   
3. Material and Scaling Challenges of Resistive Randon Access Memory Technology; Int. Nat. Conference on Materials for Power Engineering, M.G. University, kerala, India (Dec. 2015).
   
4. Atomic-scale friction: effects of Capillary condensation; IBM, Zurich, Switzerland (2006 August).
5. Ice-formation at room-temperature due to nano-confinements: Micro and Nanotribology international conference, Warsaw, Poland (September 2005).
6. Atomic layer deposition: Technology towards More than Moore: International conference on Advanced Materials and Applications, Alphonsa College, Palai, Kerala, India

   Invited talks: (National conferences/seminars)

7. Nano-materials for Artificial Intelligence; National Conference on Nano Materials; Cochin University of Science and Technology (January 2020)
8. Material Perspectives of Next Generation Memory and Computation; St. Thomas College, Ranni (December 2019)
9. Electronic Memory technology: ReRAMs; Invited lecture at Crescent University of Science and Technology, Chennai (September 2019)
10. Physics of artificial intelligence: Government Engineering College, Induction program (August 2019)
11. Evolution of microscopes: seing and playing with atoms: National Science Day Lecture, Rajiv Gandhi Center for Biotechnology (RGCB), Thiruvananthapuram (28 February 2019)
    
12. Material Challenges of Future memory tachnology; National Conference on Advanced Functional Materials, Hindu College, Nagarcoil (25 February 2018)
    
13. Where Physics meets Artificial Intelligence; National Seminar on Advances in Theoretical and Experimental Physics, Govt. Women's College, Trivandrum (26 October 2018)
    
14. The physics of future memory technologies, National Seminar on Functional Materials, Assumption College, Changanassery (28 September 2018)
    
15. Intellectual Property Rights and Patents; Kerala University (October 2018)
    
16. Seeing and playing with Atoms, National Seminar on Foundations of Physics, Government College, Nedumangad, January 12, 2018.
    
17. Scanning Tunneling Microscopy and Spectroscopy; National Seminar on Quantum mechanics, Assumption College, Changanacherry (December 2017)
18. Quantum Tunneling in Technology:National Seminar on Quantum mechanics, Assumption College, Changanacherry (December 2017)
19. Graphene-based technologies: An overview: National Seminar on Advanced Materials, Mar Ivanios College, Thiruvananthapuram (December 2017)
    
20. Graphene for Optoelectronics applications: National Seminar on Materials for electronic and Optoelectronic Applications, CMS College, (November 2017)
    
21. Intellectual Property Rights and Patents; Kerala University (October 2017)
    
22. From Nano to Nano; World Space Week, LPSC Trivandrum (October 2017)
    
23. Technology Roadmaps, Government Arts College, Trivandrum (February 2017)
    
24. It's all about Nanotechnology; IIST at School Program, Thalassery, Kannur, Kerala (November 2016)
    
25. Optical properties of Reduced Garphene Oxide devices, National Seminar on Solar Photochemistry : Fundamentals & Applications, Fatima Mata National College, Kollam (January 2016)
26. Scaling down the transistors: Phyics and Technology, National Seminar or Nanomaterials for Energy Applications, S.N. College, Punalur (January 2016).
    
27. Opto-electronics with Reduced Graphene Oxide; National Seminar on Optoelectronics, Kerala University, Trivandrum (2015 Dec.)
28. Materials for ReRAM Technology; National Seminar on Advanced Materials, St. Pauls College, Cochin (2015 Dec.)
29. Resistive Random Access Memory Technology; Nat. Conference on Advanced Materials, Deamatha College, Kottayam (2015 Dec.)
    
30. Graphene: Department of Physics, University of Kerala, Karyavattom campus; FDP (2015 Dec.)
    
31. ReRAM: the future of electronic memory technology: St.Stephens College, Pathanapuram, Kollam (2015 November)
    
32. Introduction to nanoelectronics; Amal Jyothi College of Engineering, FDP (2015 April)
33. The revolutions in the Electronic Memory: Advances in Nanotechnology (FDP), TKM College of Engineering, Kollam (2015 March).
34. Trends in Nanotechnology Research: National Seminar on Nanoscience and Nanotechnology, SN College, Varkkala (2015 March)
35. Living in the Quantum World; Nantional Seminar on Nanotechnology, SN College Chempazhanthi (2015 March)
36. Quantum Alzheimer's: the future of the Electronic Memory: University College, Kerala, Trivandrum (2015 January)
37. The Trends and Evolutions in Technology: Vins college of Engineering, Nagarcoil (2015 February).
38. Evolutions in Nanotechnology: Bohr Model workshop, St. Thomas College, Palai, Kerala (2014 December)
39. Nanotechnology roadmaps, Kerala University FDP (2014 November)
40. Technology Roadmaps: Kerala University FDP (2014 November)
41. Beyond Moore: Advances in miniaturization technology; Nanoscience Conference, Central University of Kerala (2014 October)
42. Nano-plasmonics: National Science Day Seminar, Department of Photonics, Cochin University of Science and Technology, Kerala, India (2014 February)
43. From Bohr to Bohr: evolutions in nanotechnology: Seminar on 100th Anniversary of Bohr atom Model, Physics Dept., CUSAT (2014 February)
44. Is there enough room at the bottom? Kerala Breakthrough Science Society; Priyadarshini Planetarium (2014 January)
45. Nanotechnology – basics and perspectives: Cochin University of Science and Technology, India (August 2004).
46. Atomic layer deposition– Special seminar, Cochin University of Science and Technology (CUSAT) India, (December 2010)

    Other Talks:

47. Ice-formation at room temperature in atomic-scale friction: Nanotribology conference, Antalya, Turkey (September 2006).
48. Capillary condensation in atomic friction: Physical Preview Lunch meeting, Leiden, The Netherlands (January, 2006).
49. Capillary Condensation in atomic friction: FOM annual meeting, Veldhoven, The Netherlands, December 2005.
50. Capillary condensation in atomic friction: NEVAC Day, Eindhoven, The Netherlands (November 2005).
51. Effects of capillary condensation in nanoscopic sliding: Tribology Day, Leiden, The Netherlands (June 2005).
52. Thermolubricity in atomic-scale friction: ESF Nanotribology conference, France (June 2005).
53. Ice formation at room temperature in atomic-scale friction experiments: Nanotribology conference, Vienna, Austria (March 2005).
54. Capillary condensation and ice-formation in atomic-scale friction experiments: American Physical Society meeting, Los Angeles, CA, USA (March 2005).
55. Studies on Tunneling Properties of CdS Bulk-Nano Junctions: National conference on Material Science Trichi,   India (2000)
56. Effects of Increasing pH on the Morphology of Chemically deposited CdS films – National conference on Advanced Materials, M.G University, Kerala, India (2000).

Other Conference contributions:

• Effect of Central Metal Ion on Molecular Dipole in Porphyrin Self-Assembled Monolayers; M. A. Khaderbad, M. Rao, K.B. Jinesh, S. Madhu, M. Ravikanth, V. Ramgopal Rao, International Conference on Materials for Advanced Technologies or (ICMAT), June 26-July 1, 2011, Suntec City, Singapore.
• Investigation of optical and electronic properties of Mn Doped ZnO nanowires and devices; R. R. Prabhakar, N. Mathews, G. K. Karthik, S. S. Pramana, K.B. Jinesh,  B. Varghese, C. H. Sow, International Conference on Materials for Advanced Technologies or (ICMAT), June 26-July 1, 2011, Suntec City, Singapore.
• Characterization of individual metal?oxide nanowires using AC impedance spectroscopy; G. K. Karthik, K.B. Jinesh, Y. Yizhong,  (ICMAT), 2011, Suntec City, Singapore

• Excellence Starts With You” award of NXP Semiconductors, Netherlands (2009) for the contribution to high-density capacitors project.
• Achieved “Clean Energy Research Program (CERP05)” 2012 grant from Economy Development Board (S$ 3.75M) for developing CIGS solar cell mini-modules in Singapore, together with SERIS, NUS (March 2012).

We have two Research Laboratories:

• Electronic Materials and Devices (EMERALD) Laboratory established for research in fundamentals; physics for technology.
  

• Space Technology Innovations and Characterizations (STIC) Laboratory established for research in technology that leads to device prototypes, mainly intended for applications in ISRO's present and future missions. Brief descriptions of the labs can be seen below.

Group Members:

Mr. Preetam Hazra (PhD Student)        Ms. Anna Thomas (PhD Student)      Mr. Dayal. G. (PhD Student)

Facilities:

The major facilities of our lab include a Pulsed Laser Deposition (PLD) system, two Atomic Layer Deposition (ALD) systems, Thermal evaporator, Probe-station and parametric analyzer to measure the device properties. We have developed a home-built Pulsed laser deposition (PLD) system and an Atomic Layer Deposition (ALD) system for developing thin films of electronic materials.

                Home-built PLD system                                            Home-built ALD system in progress                         Thermal ALD System                                Probe-station

Electronic Materials and Devices (EMERALD) Laboratory

Broadly speaking, our research group focuses mainly on the material and device challenges of the Artificial Intelligence research. Our research interests are on two related technologies: the future Electronic memory devices and Thin film transistors (TFT). In memory options, we are currently studying Resistive Random Access Memory (ReRAM or RRAM) devices and several physical phenomena in this upcoming technology.  As the next level, research is ongoing in Neuromorphic memory technology.

In our labs, we study and try to understand the properties of electronic materials apt for these technologies by studying their electronic and opto-electronic properties. For instance, semiconductors with controllable defect levels are useful for the Resistive random access memory (ReRAM) technology.  Ultra-thin high-k dielectrics are important for Thin Film Transistor technology. High-mobility semiconductors for TFT's are of great interest to us. We attempt to understand the materials from its molecular electronic structures and to know their charge transport properties in various device configurations. Device performance will shed light on the materials properties as well. The set of materials in our current focus includes 2-dimensional materials including transition metal chalcogenides and graphene derivatives. We employ custom-built Pulsed Laser Deposition (PLD), custom-built Atomic Layer Deposition (ALD), Physical Vapor Deposition techniques and chemical techniques to fabricate thin films of interest. Other important semiconducting materials such as doped ZnO, organic materials and perovskite materials also are of great interest to us. We mostly follow thin film deposition methods that are technology compatible, as per International Technology Roadmaps.

Besides the material characterization techniques, we use Scanning Tunneling Microscope (STM) together with tunneling spectroscopy (STS) to understand the electronic mapping and local density of states (LDOS) of material surfaces. Density functional theory (DFT) calculations are used to understand and predict the results and to modify the materials further for applications. More on the research areas we are focusing is given below.

 1. Resistive Random Access Memory (ReRAM) Devices

The aggressive scaling down of the dimensions of the CMOS devices indicates that within this decade, further miniaturization of the memory elements, especially the Flash technology, will meet challenges at various levels due to the direct quantum tunneling of the stored charges and consequent data loss. To circumvent this, various solutions have been proposed and one among them is the suddent changes in the resistance observed in some materials under voltage stress. This phenomenon is interesting for the future memory technology because of its process simplicity (thus, low-cost) and technical compatibility with the existing CMOS technologies. Several materials, e.g. ZnO, TiO₂, organic materials, organic-inorganic hybrids, perovskites etc. exhibit reproducible reversible resistance switching. We focus on understanding the mechanisms behind resistive switching in various materials and to explore the scalability issues of ReRAM devices.