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H-index (as on 2025 June): 27
Total citation (as on 2025 June): 2723
Ph.D. Programs:
Completed:
Ongoing:
Master's Projects
2024
2023
2022
2019
2018
2017
2016
2015
Completed Internships:
Completed Projects:
1. Electronic manipulation of surface plasmon polaritons on graphene: IIST Fast-Track project, (2014-2016): 10 Lakhs
2. Surface Engineering Techniques for Improving the Life Performance of Ball Bearing Systems of ISRO Spacecraft Systems: Funded by ISRO Inertial Systems Unit, ISRO (IISU, 49.6 Lakhs)
3. Development of Surface Discharge Sparkplugs: Funded by Liquid Propulsion Systems Center, ISRO (LPSC, 23.64 Lakhs).
Ongoing Projects
1. Semiconductor Physics
2. Device Physics and Nanoelectronics
3. Solid State Physics
4. Process Technology
Journal Publications:
From IIST
1. Archana Thomas, S Syamadas, K.B. Jinesh, Molecular level inelastic electron tunneling spectroscopy of protoporphyrin using scanning tunneling microscope, Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 337, 126126 (2025). Impact Factor (IF): 4.3.
DOI:https://doi.org/10.1016/j.saa.2025.126126
2. VM Rajesh, G Dayal, J Gondhalekar, K.B Jinesh, From Hebbian Learning to Pattern Recognition: The role of oxygen vacancies in the synaptic responses of magnetron sputtered MoxOy devices, Materials in Semiconductor Processing, 188, 109194 (2025). I.F: 4.2.
DOI: https://doi.org/10.1016/j.mssp.2024.109194
3. Debashree Das, G.M Gouda, K.B Jinesh, Observation of novel carbon nanocorals during the synthesis of graphene, and investigations on their composition, morphological and structural properties, Carbon Trends 17, 100411 (2024). I.F. 3.1
DOI:https://doi.org/10.1016/j.cartre.2024.100411
4. Renjith. S, S.J. Devaki, K.B. Jinesh, Ionic Liquid Crystal-Based Soft Template Approach for Synthesizing ZnO Nanostructures and Their Applications in Thin-Film Transistors, Journal of Electronic Materials 53, 7839 (2024). I.F: 2.2
DOI: https://doi.org/10.1007/s11664-024-11469-z
5. R.S Viswajit, K Ashok, K.B. Jinesh, Tailoring of charge carriers with deposition temperature in pulsed laser deposited BiFeO3 thin films, Applied Surface Science, 661, 160016 (2024). I.F: 6.3
DOI: https://doi.org/10.1016/j.apsusc.2024.160016
6. C Muthu, AN Resmi, A Ajayakumar, NEA Ravindran, G Dayal, K.B. Jinesh, C. Vijayakumar, Self‐Assembly of Delta‐Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism, Small 2304787 (2024). I.F: 13
DOI: https://doi.org/10.1002/smll.202304787
7. S Annamalai, G Dayal, J Gondhalekar, K.B. Jinesh, Plasma-Enhanced Atomic Layer Deposition of Titanium Oxynitride (TiOxNy) Thin Films and Their Neuromorphic Applications ACS Applied Electronic Materials, 6 (1) 319 (2024). I.F: 4.4
DOI:https://doi.org/10.1021/acsaelm.3c01343
8. G Dayal, K.B. Jinesh, Correlation between oxygen vacancies and neuromorphic properties of pulsed laser-deposited bismuth iron oxide artificial synapses, Applied Physics A 129 (11), 777 (2023). I.F: 2.5
DOI: https://doi.org/10.1007/s00339-023-07060-8
9. Gopika K.K, Harsha Kumar K, R Ravichandran, Prasanth V, K.B Jinesh, Oommen P Mathew, S Ananthakumar, A Sri Peer Mohammed,Effect of titanium dioxide nanocoating on the colour stability of room temperature vulcanizing maxillofacial silicone—an invitro study, Clinical Oral Investigations, 1-9 (2023). I.F. 3.1
DOI:https://doi.org/10.1007/s00784-023-05369-5
10. JA Lekshmi, TN Kumar, K.B. Jinesh, Complementary Resistive Switching in ZnO/Al2O3 bi-layer devices, IEEE Transactions on Nanotechnology, 22, 206 (2023). I.F: 2.1
DOI: https://10.1109/TNANO.2023.3268204
11. Anna Thomas, K.B. Jinesh, Excitons and Trions in MoS2 Quantum Dots: The Influence of the Dispersing Medium, ACS OMEGA, 7, 6531 (2022). I.F. 3.7
DOI: https://doi.org/10.1021/acsomega.1c05432
12. Dayal G, K.B. Jinesh, Linear Weight Update and Large Synaptic Responses in Neuromorphic Devices Comprising Pulsed-Laser-Deposited BiFeO3, ACS Applied Electronic Materials, 4, 592 (2022). I.F: 4.4
DOI: https://doi.org/10.1021/acsaelm.1c00958
13. M. Sundararajan, RG Rejith, RA Renjith, A Peer Mohamed, GS Gayathri, A.N. Resmi, K.B. Jinesh, VJ Loveson; Raman-XPS spectroscopic investigation of heavy mineral sands along Indian coast, M Sundararajan, Geo-Marine Letters 41 (2), 22 (2021). I.F. 1.4
DOI: https://doi.org/10.1007/s00367-021-00694-8
14. J.A. Lekshmi, T.N. Kumar, A.F. Haider, K.B. Jinesh, The effect of the top electrode on the switching behavior of bipolar Al2O3/ZnO RRAM, Microelectronic Engineering, 250, 111637 (2021). I.F. 2.6
DOI: https://doi.org/10.1016/j.mee.2021.111637
15. Anna Thomas, M.S. Parvathy, K.B. Jinesh, Synthesis of Nanodiamonds using Liquid-Phase Laser Ablation of Graphene and its application in Resistive Random Access Memory; Carbon Trends, 100023 (2021). I.F. 3.1
DOI: https://doi.org/10.1016/j.cartre.2020.100023
16. C. Muthu, A.N. Resmi, J.K. Paul, G. Dayal, N. Krishna, K.B. Jinesh, C.Vijayakumar Nair, Resistive switching in formamidinium lead iodide perovskite nanocrystals: a contradiction to the bulk form;, J. Mater. Chem. C, 9, 288-293 (2021). I.F. 5.7
DOI: https://doi.org/10.1039/D0TC03275A
17. L. Vijayan, K.S. Kumar, K.B. Jinesh, Influence of intensity on copper phthalocyanine-based organic phototransistors, Materials Today: Proceedings 47 (4),1099-1103 (2021). I.F. 1.94
DOI: https://doi.org/10.1016/j.matpr.2021.07.125
18. Jayita Dutta, C.A. Mithun, S. Dutta, K.B. Jinesh, An inherent Instability study using ab initio computational methods and experimental validation of Pb(SCN)2 based perovskites for solar cell applications; B. Rai, Scientific Reports 10, 15241 (2020). I.F. 3.8
DOI: https://doi.org/10.1038/s41598-020-72210-4
19. Anna Thomas, Resmi A.N., Akash Ganguly, K.B. Jinesh, Programmable electronic synapse and nonvolatile resistive switches using MoS2 quantum dots; Scientific Reports 10 (1), 1-10 (2020). I.F. 3.8
DOI: https://doi.org/10.1038/s41598-020-68822-5
20. A.L. Jagath, T.N. Kumar, H.A. Almurib, K.B. Jinesh, Analytical modeling of tantalum/titanium oxide-based multi-layer selector to eliminate sneak path current in RRAM arrays, IET Circuits, Devices & Systems 14 (7), 1092 (2020). I.F. N.A.
DOI: https://doi.org/10.1049/iet-cds.2019.0480
21. Arya Lekshmi Jagath, Nandha Kumar, K.B. Jinesh, Multilevel non-volatile memory based on Al2O3/ZnO bilayer device; Micro and Nano Letters, 15, 910-914 (2020). I.F. 1.5
DOI: https://doi.org/10.1049/mnl.2020.0335
22. Preetam Hazra, K.B. Jinesh, Vertical limits of resistive memory scaling: The detrimental influence of interface states; Applied Physics Letters, 116 (17), 173502 (2020). I.F. 3.5
DOI: https://doi.org/10.1063/1.5139595
23. C Molji, S Renjith, K.B. Jinesh, J.D. Sudha, Macroscopically oriented (3-pentadecyl phenol) dangled fluorene based conductive polymer through side-chain engineering for microelectronics; Express Polymer Letters 13 (12) (2019). I.F. 2.7
DOI: https://10.3144/expresspolymlett.2019.90
24. Lekhsmi Vijayan, K. Shreekishna Kumar, K.B. Jinesh*, Organic Field-Effect Transistors using Cobalt Phthalocyanine for Ultraviolet sensor applications; Sensor Letters 17(8) 619 (2019). I.F. 2.2
DOI: https://doi.org/10.1166/sl.2019.4120
25. Sheena Sukumaran, Saurabh Thripathi, A.N. Resmi, K.G. Gopchandran, K.B. Jinesh, Influence of surfactants on the electronic properties of liquid-phase exfoliated graphene; Material Science and Engineering-B 240, 62 (2019). I.F. 3.9
DOI: https://doi.org/10.1016/j.mseb.2019.01.003
26. Renjith. S, K.B. Jinesh, C. Molji, Sudha J.D., Stimuli-responsive donor-acceptor poly (dithienyl benzothiodiazole) for efficient charge transport applications; Materials Chemistry and Physics, 22, 55 (2019), I.F. 4.3
DOI: https://doi.org/10.1016/j.matchemphys.2018.09.070
27. Preetam Hazra, K.B. Jinesh, Scaling of resistive random access memory devices beyond 100 nm2: Influence of grain boundaries studied using scanning tunneling microscopy; Nanotechnology 29, (49) 495202 (2018). I.F. 2.9
DOI: https://10.1088/1361-6528/aae17c
28. Uttam Kumar Das, Geert Eneman, Ravi Shankar R. Velampati, Y. S. Chauhan, K. B. Jinesh, and T. K. Bhattacharyya, Consideration of UFET Architecture for the 5nm Node and Beyond Logic Transistor, IEEE Journal of the Electron Devices Society, 6, 1129 (2018). I.F. 2
DOI: https://doi.org/10.1109/JEDS.2018.2868686
29. Lekhsmi Vijayan, Anna Thomas, K. Shreekishna Kumar, K.B. Jinesh, Low power organic field-effect transistors with Copper Phthalocyanine as the active layer; J. Science - Advanced Materials and Devices 3 (3), 348 (2018). I.F. 6.7
DOI: https://doi.org/10.1016/j.jsamd.2018.08.002
30. Sheena Sukumaran, C.R. Rekha, A.N. Resmi, K.B. Jinesh, K.G. Gopchandran; Raman and Scanning Tunneling Spectroscopic Investigation in Graphene-Silver Nanoparticles, J. Science - Advanced Materials and Devices 3 (3) 353 (2018). I.F. 6.7
DOI: https://doi.org/10.1016/j.jsamd.2018.06.003
31. Sheena Sukumaran, K.B. Jinesh, K.G. Gopchandran, Surfactant molecules make liquid phase exfoliated graphene a switching element for resistive random access memory applications; Journal of Materials Science: Materials in Electronics 29 (11) 9700 (2018). I.F. 2.8
DOI: https://doi.org/10.1007/s10854-018-9007-2
32. Sheena Sukumaran, K.B. Jinesh, K. Gopchandran, Liquid-phase exfoliated graphene for electronic applications: Material Research Express 4 (9), 095017 (2017). I.F. 1.8
DOI: https://10.1088/2053-1591/aa8586
33. Somnath Chakraborty, A.N. Resmi, Renuka Devi Pothuraju, K.B. Jinesh, P-channel thin-film transistors using reduced graphene oxide: Nanotechnology 28, 155201 (2017) I.F. 2.9
DOI: http://10.1088/1361-6528/aa628d
34. S. Renjith, K.B. Jinesh, S.J. Devaki, Anisotropic phase formation induced enhancement of resistive switching in bio-based imidazolium ionic liquid crystals; Chemistry Select, 2, 315 (2017) I.F. 1.9
DOI: https://doi.org/10.1002/slct.201601715
35. Chinnadurai Muthu, Shivani Agarwal, Anuja Vijayan, Preetam Hazra, K.B. Jinesh, and Vijayakumar C. Nair, Hybrid Perovskite Nanoparticles for High-Performance Resistive Random Access Memory Devices: Control of Operational Parameters through Chloride Doping; Advanced Materials Interfaces 3 (18), 1600092 (2016) I.F. 6.39
DOI: https://10.1002/admi.201600092
36. Preetam Hazra, A.N. Resmi, K.B. Jinesh, Gate Controllable ReRAM Devices using Reduced Graphene Oxide;, Applied Physics Letters, 108, 153503 (2016). I.F. 3.5
DOI: https://doi.org/10.1063/1.4945744
37. R. Ramakrishnan, S. J. Devaki, K B Jinesh, M. R. Varma, Facile Strategy for the Fabrication of Efficient Nonvolatile Bistable Memory Device Based on Polyvinylcarbazole-Zinc Oxide; Physica Status Solidi A: Applications and Materials Science 213, 2414 (2016). I.F: 1.9
DOI: https://doi.org/10.1002/pssa.201600058
38. J. Mangalam, S. Agarwal, A.N. Resmi, S. Sundararajan, K.B. Jinesh, Resistive switching in Polymethyl Methacrylate thin films; Organic Electronics 29, 33 (2016). I.F: 2.7
DOI: https://doi.org/10.1016/j.orgel.2015.11.017
39. M.K. Kavitha, K.B. Jinesh, R. Philip, P. Gopinath, H. John, Defect engineering in ZnO nanocones for visible photoconductivity and nonlinear absorption; Phys. Chem. Chem. Phys.16, 25093 (2014). I.F: 3.676
DOI: https://doi.org/10.1039/C4CP03847A
Earlier Publications
40. V. Aravindan, K.B. Jinesh, R. Ramanujam, S. Madhavi, Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries; Nano Energy, 2, 720 (2013). I.F: 16.8
DOI: https://doi.org/10.1016/j.nanoen.2012.12.007
41. X. Zing, S.S. Pramana, S.G. Mhaisalkar, X. Chen, K.B. Jinesh, Low-temperature synthesis of wurtzite zinc sulfide thin films by chemical spray pyrolysis; Phys. Chem. Chem. Phys. 15, 6763 (2013). I.F: 3.676
DOI: https://doi.org/10.1039/C3CP43470B
42. T. Viet, M. Rao, P. Andreasson, K.B. Jinesh, Photo-carrier generation in CuxO thin films deposited using radio frequency magnetron sputtering;, Appl. Phys. Lett. 102, 032101 (2013). I.F. 3.5
DOI: https://doi.org/10.1063/1.4788680
43. K.B. Jinesh, S.K. Batabyal, R. Devi Chandra, Y. Huang, Solution-processed CuZnAlS2: a new memory material with electrical bistability; J. Mater. Chem. 22, 20149 (2012). I.F. 5.7
DOI: https://doi.org/10.1039/C2JM33471B
44. M. A. Khaderbad, M. Rao, K.B. Jinesh, R. Pandharipande, S. madhu, M. Ravikanth, V. R. Rao, Effect of Central Metal Ion on Molecular Dipole in Porphyrin Self-Assembled Monolayers; Nanoscience and Nanotechnology Letters, 4, 729 (2012). I.F. 1.13
DOI: https://10.1166/nnl.2012.1380
45. N. Yantira, M. H. Kumar, N. Mathews, K.B. Jinesh, S.G. Mhaisalkar, Modulating the optical and electrical properties of all metal oxide solar cells through nanostructuring and ultrathin interfacial layers; Acta Materialia 85, 486 (2012). I.F: 8.3
DOI: https://10.1016/j.electacta.2012.08.015
46. A.S. Cherian, K.B. Jinesh, Y. Kashiwaba, T. Abe, A.K. Balamurugan, S. Dash, A.K. Tyagi, C.S. Kartha, , K.P. Vijayakumar, Double layer CuInS2 absorber using spray pyrolysis: A better candidate for CuInS2/In2S3 thin-film solar cells; Solar Energy 86, 1872 (2012). I.F: 6
DOI: https://doi.org/10.1016/j.solener.2012.02.037
47. B. Varghese, B. Mukherjee, K. R. G. Karthik, K. B. Jinesh, S. G. Mhaisalkar, Electrical and photoresponse properties of Co3O4 nanowires; Eng Soon Tok, Chorng Haur Sow J. Appl. Phys. 111, 104306 (2012). I.F: 2.7
DOI: https://doi.org/10.1063/1.4712497
48. R. Ramanujam, N. Mathews, K.B. Jinesh, K.R.G. Karthik, S.S. Pramana, S.H. Saw, S.G. Mhaisalkar, Efficient multispectral photodetection using Mn-doped ZnO nanowires; J. Mater. Chem., 22, 9678 (2012). I.F: 5.7
DOI: https://doi.org/10.1039/C2JM16698D
49. T.H. Sajeesh, K.B. Jinesh, M. Rao, C.S. Kartha, K.P. Vijayakumar, Defect levels in SnS thin films prepared using chemical spray pyrolysis, Phys. Stat. Solidi (a) 209 (7), 1274 (2012). I.F: 1.9
DOI: https://10.1002/pssa.201127442
50. R. R. Prabhakar, S. S. Pramana, K.R.G. Karthik, C. H. Sow, K.B. Jinesh, Ultra-thin conformal deposition of CuInS2 on ZnO nanowires by chemical spray pyrolysis, J. Mater. Chem. 22, 13965 (2012). I.F: 5.7
DOI: https://doi.org/10.1039/C2JM31270K
51. M.K. Matters-Kammerer, K.B. Jinesh, F. Roozeboom, J.H. Klootwijk, Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon; IEEE Transactions on Semiconductor Manufacturing 25, 247 (2012). I.F: 2.3
DOI: https://doi.org/10.1109/TSM.2012.2183903
52. T.H. Sajeesh, K.B. Jinesh, C.S. Kartha, K.P. Vijayakumar Role of pH of precursor solution in taming the material properties of spray pyrolysed SnS thin films; Appl. Surf. Sci. 258, 6870 (2012). I.F: 6.3
DOI: https://doi.org/10.1016/j.apsusc.2012.03.121
53. MK Matters-Kammerer, KB Jinesh, TGSM Rijks, F Roozeboom, JH Klootwijk, Process Technology, Characterization, and Optimization-Characterization and Modeling of Atomic Layer Deposited High-Density Trench Capacitors in Silicon, 25 (2) 247 (2012). I.F: 2.3
DOI: http://dx.doi.org/10.1109/TSM.2012.2183903
54. V.S. Kale, K.B. Jinesh, R. Ramanujam, S.H. Saw, S.G. Mhaisalkar, Enhanced electron field emission properties of high aspect ratio silicon nanowire–zinc oxide core-shell arrays; Phys. Chem. Chem. Phys., 14, 4614 (2012). I.F. 3.676
DOI: https://10.1039/C2CP40238F
55. K.R.G. Karthik, H. K. Mulmudi, K.B. Jinesh, N. Mathews, C.H. Sow, Y. Z. Huang, S. G. Mhaisalkar. Charge transport in hierarchical α-Fe2O3 nanostructures; Appl. Phys. Lett. 99, 132105 (2011). I.F. 3.5
DOI: https://doi.org/10.1063/1.3641903
56. K.B. Jinesh, V.A. Dam, S.H. Brongersma, M. Crego-Calama, Room-temperature CO2 sensing using metal-insulator–semiconductor capacitors comprising atomic-layer-deposited La2O3 thin films; Sensors and Actuators-B 156, 276 (2011). I.F. 8
DOI: https://doi.org/10.1016/j.snb.2011.04.033
57. T.V. Vimalkumar, N. Poornima, K.B. Jinesh, C. Sudha Kartha and K.P.Vijayakumar, On single doping and co-doping of spray pyrolysed ZnO films: Structural, Electrical and Optical Characterization; Appl. Surf. Sci. 257, 8334 (2011). I.F. 6.3
DOI: https://doi.org/10.1016/j.apsusc.2011.03.118
58. J.H. Klootwijk, K.B. Jinesh, MIM in 3-D: dream or reality? Microelectronic Engineering 88, 1507 (2011). I.F. 2.6
DOI: https://doi.org/10.1016/j.mee.2011.03.137
59. K.B. Jinesh, Van Hemmen, J.L., Van De Sanden, M.C.M., Roozeboom, F., Klootwijk, J.H., Besling, W.F.A., Kessels, W.M.M., Dielectric properties of thermal and plasma-assisted atomic layer deposited Al2O3 thin Films; J. Electrochem. Soc. 158, G21 (2011). I.F. 3.1
DOI: https://10.1149/1.3517430
60. K.B. Jinesh, Y. Lamy, E. Tois, R. Forti, M. Kaiser, F. Roozeboom, W.F.A. Besling, Cubic phase stabilization of atomic layer deposited ErHfOx thin films; J. Mater. Res. 8, 1629 (2010) I.F. 2.7
DOI: https://doi.org/10.1557/JMR.2010.0208
61. Y.P.R. Lamy, K.B. Jinesh, F. Roozeboom, D.J. Gravesteijn and W.F.A. Besling, RF characterization and analytical modeling of through silicon vias and coplanar waveguide for 3D integration. IEEETransactions on Advanced Packaging 33, 1072 (2010). I.F. N.A.
DOI: https://doi.org/10.1109/TADVP.2010.2046166
62. D. Hoogeland, K.B. Jinesh, F.C. Voogt, W.F.A. Besling, Y. Lamy, F. Roozeboom, M.C.M. van de Sanden and W.M.M. Kessels. Plasma-Assisted Atomic layer deposition of TiN/Al2O3 stacks for Metal-Oxide-Semiconductor capacitor applications; J. Appl. Phys. 106, 114107 (2009). I.F: 2.7
DOI: https://doi.org/10.1063/1.3267299
63. D. Hoogeland, K.B. Jinesh, F.C. Voogt, W.F.A. Besling, Y. Lamy, F. Roozeboom, M.C.M. van de Sanden and W.M.M. Kessels. Plasma-Assisted ALD TiN/Al2O3 stacks for MIMIM Trench Capacitor Applications; Electrochem. Soc. Trans. 25, (2009) 389. I.F: 3.1
DOI: https://10.1149/1.3205073
64. K.B. Jinesh, Y. Lamy, J.H. Klootwijk, W.F.A. Besling, Maxwell-Wagner instability in bilayer dielectric stacks; Appl. Phys. Lett. 95, 122903 (2009). I.F. 3.5
DOI: https://doi.org/10.1063/1.3236532
65. K.B. Jinesh, Y. Lamy, E. Tois, W.F.A. Besling, Charge conduction mechanisms of atomic-layer deposited Er2O3 thin films; Appl. Phys. Lett. 94, 252906 (2009). I.F. 3.5
DOI: https://doi.org/10.1063/1.3159833
66. K.B. Jinesh, Y. Lamy, R. Wolters, W.F.A. Besling, Silicon out-diffusion and aluminum in-diffusion in atomic-layer deposited La2O3 thin films; Appl. Phys. Lett. 93, 192912 (2008). I.F. 3.5
DOI: https://doi.org/10.1063/1.3025850
67. K.B. Jinesh, S. Yu Krylov, H. Valk, M. Dienwiebel, J.W.M. Frenken; Thermolubricity in atomic-scale friction; Phys. Rev. B 78, 155440 (2008). I.F:3.2
DOI: https://doi.org/10.1103/PhysRevB.78.155440
68. K.B. Jinesh et.al, Enhanced electrical properties of atomic layer deposited LayZr1-yOx thin films with embedded ZrO2 nanoclusters: Appl. Phys. Lett. 93, 172904 (2008). I.F. 3.5
DOI: https://doi.org/10.1063/1.3009202
69. K.B. Jinesh, WFA Besling, E Tois, JH Klootwijk, R Wolters, W Dekkers, M Kaiser, F Bakker, M Tuominen, F Roozeboom; Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films: Appl. Phys. Lett. 93, 062903 (2008). I.F. 3.5
DOI: https://doi.org/10.1063/1.2971032
70. JH Klootwijk, K.B. Jinesh, W Dekkers, JF Verhoeven, FC Van Den Heuvel, H-D Kim, D Blin, MA Verheijen, RGR Weemaes, M Kaiser, JJM Ruigrok, F Roozeboom, Ultra-high capacitance density for multiple ALD-grown MIM capacitor stacks in 3D silicon: IEEE Electron Device Lett. 29, 7, (2008) I.F: 4.1
DOI: https://10.1109/LED.2008.923205
71. K.B. Jinesh, J.W.M. Frenken, Experimental evidence for ice formation at room temperature Phys. Rev. Lett. 101, 036101 (2008). I.F: 8.1
DOI: https://doi.org/10.1103/PhysRevLett.101.036101
72. K.B. Jinesh, J.W.M. Frenken, Capillary condensation in atomic-scale friction: how water acts like glue; Phys. Rev. Lett. 96, 166103 (2006): I.F: 8.1
DOI: https://doi.org/10.1103/PhysRevLett.96.166103
73. S. Yu Krylov, K.B. Jinesh, H. Valk, M. Dienwiebel, J.W.M. Frenken; Thermally-induced reduction of friction at atomic-scale; Phys. Rev. E 71, 65101R, (2005). I.F: 2.2
DOI: https://doi.org/10.1103/PhysRevE.71.065101
74. K.B. Jinesh, C. Sudha Kartha, K.P. Vijayakumar; Role of excess Cadmium in the electrical properties of devices made of chemically deposited nano-CdS; Appl. Surf. Sci, 207, 26 (2003). I.F: 6.3
DOI: https://doi.org/10.1016/S0169-4332(02)01216-3
75. K.B. Jinesh, C. Sudha Kartha, K.P.Vijayakumar; How Quantum confinement comes in chemically deposited CdS? – A detailed XPS investigation; Physica E 19, 303 (2003). I.F: 2.9
DOI: https://doi.org/10.1016/S1386-9477(03)00351-5
76. K.B. Jinesh, C. Sudha Kartha, K.P. Vijayakumar, Effects of Size-quantization in the I-V characteristics of CdS Bulk- nano junctions; Appl. Surf. Sci, 195, 263 (2002). I.F: 6.3
DOI: https://doi.org/10.1016/S0169-4332(02)00562-7
Books:
Book Chapters (Invited):
Implementation of sub-filamentary network-based variability model for Ta2O5/TaOx RRAM J.A. Lekshmi, T.N. Kumar, A.F. Haider, K.B. Jinesh, 2021 IEEE 21st International Conference on Nanotechnology (NANO), 366-369
Ultrahigh-density trench decoupling capacitors comprising multiple MIM layer stacks grown by atomic layer deposition, F Roozeboom, W Dekkers, KB Jinesh, JH Klootwijk, MA Verheijen, H-D Kim, D Blin, Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29-July 2008, Bruges, Belgium.
We have two Research Laboratories:
Group Members:
Post-Doctoral Fellow
Dr. Soundararaj Annamalai (PhD from IIT Hyderabad): Project: Development of Atomic Layer Deposition (ALD) System (DST Project).
PhD Researchers
Mr. Dayal. G. Research Topic: Neuromorphic Devices using Pulsed Laser deposited BiFeO3: Synaptic Nonlinearity for Pattern Recognition Applications.
Mr. Jyothis Raj J. Research Topic: Atomic Layer Deposition for Electronic Applications (DST Project).
Mr. Viswajit. S.R. (Scientist/ISRO/ VSSC): Research Topic: Ferroelectric Neuromorphic Systems.
Ms. Debashree Das (ISRO/ LEOS, Bangalore): Research Topic: Carbon Forms for Space Applications.
Ms. Archana Thomas: Research Topic: Inelastic Electron Tunneling Spectroscopy (IETS).
Mr. Abhijith Anand: Research Topic: Photonic Neuromorphic Systems.
Ms. Vaishnavi Rajesh: Research Topic: Magnetron Sputtered Metal oxides for neuromorphic Applications.
Former Members:
Dr. Preetam Hazra (PhD Completed) Dr. Anna Thomas (PhD Completed)
Facilities:
The major facilities of our lab include a Pulsed Laser Deposition (PLD) system, two Atomic Layer Deposition (ALD) systems, Thermal evaporator, Probe-station and parametric analyzer to measure the device properties. We have developed a home-built Pulsed laser deposition (PLD) system and an Atomic Layer Deposition (ALD) system for developing thin films of electronic materials.
Home-built PLD system Home-built ALD system in progress Thermal ALD System Probe-station
Electronic Materials and Devices (EMERALD) Laboratory
Broadly speaking, our research group focuses mainly on the material and device challenges of the Artificial Intelligence research. Our research interests are on two related technologies: the future Electronic memory devices and Thin film transistors (TFT). In memory options, we are currently studying Resistive Random Access Memory (ReRAM or RRAM) devices and several physical phenomena in this upcoming technology. As the next level, research is ongoing in Neuromorphic memory technology.
In our labs, we study and try to understand the properties of electronic materials apt for these technologies by studying their electronic and opto-electronic properties. For instance, semiconductors with controllable defect levels are useful for the Resistive random access memory (ReRAM) technology. Ultra-thin high-k dielectrics are important for Thin Film Transistor technology. High-mobility semiconductors for TFT's are of great interest to us. We attempt to understand the materials from its molecular electronic structures and to know their charge transport properties in various device configurations. Device performance will shed light on the materials properties as well. The set of materials in our current focus includes 2-dimensional materials including transition metal chalcogenides and graphene derivatives. We employ custom-built Pulsed Laser Deposition (PLD), custom-built Atomic Layer Deposition (ALD), Physical Vapor Deposition techniques and chemical techniques to fabricate thin films of interest. Other important semiconducting materials such as doped ZnO, organic materials and perovskite materials also are of great interest to us. We mostly follow thin film deposition methods that are technology compatible, as per International Technology Roadmaps.
Besides the material characterization techniques, we use Scanning Tunneling Microscope (STM) together with tunneling spectroscopy (STS) to understand the electronic mapping and local density of states (LDOS) of material surfaces. Density functional theory (DFT) calculations are used to understand and predict the results and to modify the materials further for applications. More on the research areas we are focusing is given below.
1. Resistive Random Access Memory (ReRAM) Devices
The aggressive scaling down of the dimensions of the CMOS devices indicates that within this decade, further miniaturization of the memory elements, especially the Flash technology, will meet challenges at various levels due to the direct quantum tunneling of the stored charges and consequent data loss. To circumvent this, various solutions have been proposed and one among them is the suddent changes in the resistance observed in some materials under voltage stress. This phenomenon is interesting for the future memory technology because of its process simplicity (thus, low-cost) and technical compatibility with the existing CMOS technologies. Several materials, e.g. ZnO, TiO2, organic materials, organic-inorganic hybrids, perovskites etc. exhibit reproducible reversible resistance switching. We focus on understanding the mechanisms behind resistive switching in various materials and to explore the scalability issues of ReRAM devices.
Recently, we have developed a technology that enables us unifying the switching parameters of ReRAM devices, by controlling the SET and RESET process via an external bias. Thus, the new technology works with a thin film transistor configuration, where the switching occurs in the channel, which can be controlled by the gate voltage. By this we have better control over the device performance. We demonstarted the viability of this technology employing reduced graphene oxide as the channel (switching) material, and the results has been published recently in Applied Physics Letters (2016).
(Left) STM image of rGO, its Local Density of States ; (middle) Gate-bias dependent switching in rGO ReRAM; (right) Endurance measured at different gate voltages.
Using Scanning Tunneling Microscope, we probed the influence ofgrain boundaries in ZnO ReRAM devices, and found that grain boundaries behave like degenerate semiconductors. Their distribution in nanometric ReRAM devices would increase the randomness to total randomness, when the deice shrinks to dimensions of the order of 10 nm2. These results were published recently in Nanotechnology (2018).
(Left panel): Grain boundaries of ZnO probed by STM and resistive switching on grains and boundaries; (Right panel) Reconstruction of band-diagram of ZnO arounf a doublet grain boundary, using I-z spectroscopy.
Following this, we have been successful in developing graphene based ReRAM devices, with lateral switching capability, and tuneable conductivity employing various surfactant molecules (published in Materials in Electronics (2018)). In addition, we have studied the switching of PMMA thin films and explained the mechanisms in a paper published in Organic Electronics (2016).
2. Thin film transistors (TFT’s)
The development of high-mobility materials is the focus of this work. One of our spotlights is 2-dimensional materials, for example, reduced graphene oxide (rGO), derivatives of MoS2, etc., which have defect-induced bandgaps that could be beneficial for the devices. rGO and rGO-based nano-materials systems are under investigation in our group. From the TFT's fabricated using chemically exfoliated graphene, we have achieved a hole mobility of 465 cm2/Vs. We are also studying ZnO, doped with selected doping elements to enhance the channel mobility and to reduce the subthreshold swing as much as possible, within the defect engineering limit of the materials. We employ Scanning Tunneling Microscope (STM) to study the local density of states (LDOS) of the doped semiconductors, their chemical environments and relate it to the carrier transport at nano-scale.
(Left panel) Characteristics of rGO-based 150um and 60 um TFT's. (Right panel) Local Density of States (LDOS) measured using STM at graphene-like and GO-like regions on rGO.
We also demonstrated that liquid-phase exfoliated graphene could be a good alternative for rGO, with much less defects in it. These graphene transistors were exhibiting clear Dirac points with a shift in the Fermi level dur to the electron donating nature of the surfactant molecules used for exfoliation, attached to the edges. These results were published in Material Science and Engineering B recently.
(Left panel) Raman spectra of exfoliated graphene; (middle panel) TEM and SAED patterns of exfoliated graphene layers; (right panel) Ambipolar behavior of graphene TFT's with respect to bias.
Another work we pursue with is thin film transistors of organic materials. Metal Phthalocyanines are our current materials of interest, since they can be uniformly deposited using thermal evaporation, at low temperature. We recently published a work on CuPc (copper phthalocyanine) transistors in Journal of Science: Advanced Materials and Devices (2018). Works on CoPc and other selected phthalocyanine combinations are progressing in our lab.
(Left panel) Output characteristics of CuPc transistors, with and without post deposition anneal. (Right panel) Influence of the PDA on mobility.
3. Thin film solar cells
The development of solar cells for celestial applications demands high efficiency, low payload, stability for at least 20 years and excellent radiation resistance. There are not many material combinations that can do this work, but the emerging chalcopyrite and stannite materials offer possibilities of developing lower-cost compound solar cells for the satellites.
Development of thin film solar cells has several interesting scientific challenges. The absorber-buffer band alignments and their implications in the cell performance, the interface quality of the p-n junction, inter-layer diffusion mechanisms of elements and their role in the photovoltaic efficiency etc are the major topics of our interest in this category. The grain boundaries of several compound absorber layers are intriguingly influential in photo-electron conversion mechanisms, contrary to their single crystalline counterparts. Grain boundaries of compound semiconductors are one of our main research interests. We employ DFT calculations together with STM to understand various phenomena underlying the higher photoelectron conversion efficiency of polycrystalline semiconducting thin films.
Space Technology Innovations and Characterizations (STIC) Laboratory
The purpose of STIC laboratory is to carry out research and projects related to applications and future missions of ISRO. We are currently carrying out three projects with ISRO Centers:
1. Development of Surface Discharge Sparkplugs (SDS)
Surface discharge sparkplugs have been identified as the next generation sparkplugs, which have already identified its used in aircrafts and racing cars die to high plasma throughput and low power compared to the convensional sparkplugs. Another remarkable thing about semiconductor sparkplug is that the plasma generation does not depend on the pressure of the environment, and thus, the challege posed by Paschen't law can be overcome.
A Memorandum of Understanding (MoU) has been signed between IIST and Liquid Propelsion Systems Center (LPSC, ISRO) for developing a high throughput, low-power sparkplugs for the future cryogenic engines. We have successfully developed a semiconductor sparkplug that operates with DC 1kV power (rather than pulsed 5kV, which creates problems in communication systems in the launch vehicle). The system is under prototype development for the actual space qualification.
2. Development of Laser Ignition Systems (LIS)
An alternative to the conventional sparkplug that operates at a high voltage is to employ laser-based ignition in space missions. We have signed another MoU with LPSC on developing Laser Ignition Systems (LIS) for future missions. The feasibility of LIS for space applications has been demonstrated by our team at IIST and LPSC.
3. Hard coatings for improving the lifetime of ballbearings in ISRO Spacecrafts.
We have signed an MoU with ISRO Inertail Systems Unit (IISU) for developing surface engineering techniques for improving the life and performance of ball-bearing systems in ISRO Spacecraft mechanisms. This mainly involves the studies on appropriate hard-coatings on ball-bearing systems in spacecrafts, and to study the surface energy modification techniques for improving the wettability of steel ball-bearing systems. For the development of the hard-coatings,we have designed and developed an in-house deposition system, and its optimization is currently in progress.
Coatings developed to protect ball bearings from wearing.