Rakeshkumar Kurajibhai Kaneriya
This dissertation is explored the photonics inter sub band transitions (ISBT) phenomenon in an electronics Gallium Nitride (GaN) high electron mobility transistor (HEMT) device. Conventional photonic devices are operated at cryogenic temperatures to minimize the thermal effect. The reported maximum operating temperature of THz quantum cascade laser (QCL) is in the range of 150-200 K which is too low for general applications. The conduction band tuning through external gate bias makes advantage of HEMT device for room temperature (RT) terahertz applications.
